Search results for "Industrial Innovation"

showing 4 items of 4 documents

Large area perovskite light-emitting diodes by gas-assisted crystallization:

2019

Halide perovskites have been gaining considerable attention recently for use in light-emitting applications, due to their bandgap tunability, color purity and low cost fabrication methods. However, current fabrication techniques limit the processing to small-area devices. Here, we show that a facile N 2 gas-quenching technique can be used to make methylammonium lead bromide-based perovskite light-emitting diodes (PeLEDs) with a peak luminance of 6600 cd m −2 and a current efficiency of 7.0 cd A −1 . We use this strategy to upscale PeLEDs to large-area substrates (230 cm 2 ) by developing a protocol for slot-die coating combined with gas-quenching. The resulting large area devices (9 device…

Materials scienceFabricationBand gapSlot-die coatings02 engineering and technologySubstrate (electronics)Large area devicesengineering.material010402 general chemistry01 natural sciencesLuminancelaw.inventionCoatinglawQuenchingMaterials ChemistryMaterialsDiodePerovskite (structure)Industrial Innovationbusiness.industryGeneral Chemistry021001 nanoscience & nanotechnologyPerovskite light emitting diodes0104 chemical sciencesLuminanceManufacturing techniquesHalide perovskitesengineeringOptoelectronics0210 nano-technologybusinessLight-emitting diode
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Ferroelectricity and piezoelectricity in soft biological tissue: Porcine aortic walls revisited

2017

Recently reported piezoresponse force microscopy (PFM) measurements have proposed that porcine aortic walls are ferroelectric. This finding may have great implications for understanding biophysical properties of cardiovascular diseases such as arteriosclerosis. However, the complex anatomical structure of the aortic wall with different extracellular matrices appears unlikely to be ferroelectric. The reason is that a prerequisite for ferroelectricity, which is the spontaneous switching of the polarization, is a polar crystal structure of the material. Although the PFM measurements were performed locally, the phase-voltage hysteresis loops could be reproduced at different positions on the tis…

PermittivityMaterials sciencePhysics and Astronomy (miscellaneous)FerroelectricityPiezoresponse force microscopyPiezoelectricityHOL - HolstNanotechnology02 engineering and technologyDielectricPFM01 natural sciences0103 physical sciences010306 general physicsTS - Technical SciencesIndustrial InnovationElectrostrictionCondensed matter physics021001 nanoscience & nanotechnologyPiezoelectricityFerroelectricityHysteresisPorcine aortic wallsPiezoresponse force microscopyNano Technology0210 nano-technologyElectric displacement fieldBiological tissue
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Bis(arylimidazole) Iridium Picolinate Emitters and Preferential Dipole Orientation in Films

2018

The straightforward synthesis and photophysical properties of a new series of heteroleptic iridium(III) bis(2-arylimidazole) picolinate complexes are reported. Each complex has been characterized by nuclear magnetic resonance, UV-vis, cyclic voltammetry, and photoluminescent angle dependency, and the emissive properties of each are described. The preferred orientation of transition dipoles in emitter/host thin films indicated more preferred orientation than homoleptic complex Ir(ppy)3.

PhotoluminescenceMaterials sciencePicolinate emittersGeneral Chemical EngineeringThin filmschemistry.chemical_elementHOL - Holst02 engineering and technologyOrientation (graph theory)010402 general chemistry01 natural sciencesArticleEmissive propertieslcsh:Chemistrychemistry.chemical_compoundIridiumThin filmHomolepticCommon emitterTS - Technical SciencesIndustrial InnovationGeneral Chemistry021001 nanoscience & nanotechnology0104 chemical sciencesDipoleCrystallographychemistrylcsh:QD1-999Nano TechnologyCyclic voltammetryElectronics0210 nano-technology
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Review article: recommended reading list of early publications on atomic layer deposition - outcome of the "virtual Project on the History of ALD"

2017

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual proj…

semiconductor manufacturingThin filmsPatent literature2015 Nano TechnologyHOL - HolstLibrary scienceNanotechnology02 engineering and technologydeposition01 natural sciencesPoster presentationsAtomic layer deposition0103 physical sciencesAtomic layer epitaxy[CHIM]Chemical SciencesReading listPatentsComputingMilieux_MISCELLANEOUSgas-solid reaction010302 applied physicsTS - Technical SciencesIndustrial Innovationinorganic materialPhysicsAtomic layer depositionSilicaSurfaces and InterfacesatomikerroskasvatusAtomic layer021001 nanoscience & nanotechnologyCondensed Matter Physicshistory of technologySurfaces Coatings and FilmsALD0210 nano-technologySoviet unionAtomic layer epitaxial growthEpitaxyJournal of Vacuum Science and Technology A
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